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J 162

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KSh 1,050

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Type Designator: 2SJ160
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 120 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 0.15 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 400 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

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J 162 J 162

KSh 1,050