B817

Type Designator: 2SB817

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 7.5 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 60