D669

Type Designator: 2SD669

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 60