IRF 3710

Type Designator: IRF3710
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 57 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 130(max) nC
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 410 pF
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm