NJW0281

Type Designator: NJW0281G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 75